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The effects of dwell time on focused ion beam machining of silicon

Sabouri, A.; Anthony, C. J.; Bowen, J.; Vishnyakov, V. and Prewett, P. D. (2014). The effects of dwell time on focused ion beam machining of silicon. Microelectronic Engineering, 121 pp. 24–26.

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DOI (Digital Object Identifier) Link: https://doi.org/10.1016/j.mee.2014.02.025
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Abstract

In this study, the effects of dwell time on Ga+ focused ion beam machining at 30 keV for different milling currents were investigated. The surface topographies were analysed using atomic force microscopy (AFM) and the substrate structures were investigated by means of Raman spectroscopy. It has been observed that by increasing dwell time the total sputtering yield was increased even though the total dose was remained the same. Also the silicon damage by ion bombardment is reduced as the dwell time is increased. This is mainly due to catalyst behaviour of Ga inside Si which over a period of hours causes recrystallization of Si at room temperature by lowering the activation energy for crystallization.

Item Type: Journal Item
Copyright Holders: 2014 Elsevier B.V.
ISSN: 1873-5568
Keywords: focused ion beams; ion implantation damage; dwell time; Raman spectroscopy
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID: 43155
Depositing User: James Bowen
Date Deposited: 01 Jun 2015 09:15
Last Modified: 11 Nov 2016 03:40
URI: http://oro.open.ac.uk/id/eprint/43155
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