The Open UniversitySkip to content

Effects of current on early stages of focused ion beam nano-machining

Sabouri, Aydin; Anthony, Carl J.; Prewett, Philip D.; Bowen, James and Butt, Haider (2015). Effects of current on early stages of focused ion beam nano-machining. Materials Research Express, 2(5)

Full text available as:
[img] PDF (Accepted Manuscript) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (829kB)
DOI (Digital Object Identifier) Link:
Google Scholar: Look up in Google Scholar


In this report we investigate the effects of focused ion beam machining at low doses in the range of 1015–1016 ions cm-2 for currents below 300 pA on Si(100) substrates. The effects of similar doses with currents in the range 10–300 pA were compared. The topography of resulting structures has been characterized using atomic force microscope, while crystallinity of the Si was assessed by means of Raman spectroscopy. These machining parameters allow a controllable preparation of structures either protruding from, or recessed into, the surface with nanometre precision.

Item Type: Journal Item
Copyright Holders: 2015 IOP Publishing Ltd
ISSN: 2053-1591
Extra Information: 8 pp.
Keywords: focused ion beam; atomic force microscopy; Raman spectroscopy
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID: 42774
Depositing User: James Bowen
Date Deposited: 15 May 2015 08:28
Last Modified: 04 Apr 2020 11:40
Share this page:


Altmetrics from Altmetric

Citations from Dimensions

Download history for this item

These details should be considered as only a guide to the number of downloads performed manually. Algorithmic methods have been applied in an attempt to remove automated downloads from the displayed statistics but no guarantee can be made as to the accuracy of the figures.

Actions (login may be required)

Policies | Disclaimer

© The Open University   contact the OU