Singh, Aadesh P.; Kodan, Nisha; Dey, Avishek; Krishnamurthy, Satheesh and Mehta, Bodh R.
(2015).
| DOI (Digital Object Identifier) Link: | https://doi.org/10.1016/j.ijhydene.2015.01.085 |
|---|---|
| Google Scholar: | Look up in Google Scholar |
Abstract
In the present study structural, optical and electronic properties of bismuth vanadate (BiVO4) thin films prepared by rf-sputtering technique were modified by post-hydrogen treatment to improve the photoelectrochemical (PEC) performance for water oxidation. X-ray diffraction and Raman analysis do not reveal any major structural changes but show increase in crystallite size and creation of defect states, however, optical absorption studies shows changes in band gap energy values due to the creation of inter-band states on hydrogen treatment. X-ray photoelectron spectroscopy studies show that the hydrogen treatment reduces surface Bi4+ considerably and increases the density of hydroxyl groups on the BiVO4 surface. The combined effect of these changes manifests in terms of enhanced photocurrent density of 3.31 mA/cm2 (at applied potential 1.0 V versus Ag/AgCl), which is about nine time higher than the pristine BiVO4 and reduced photocurrent onset potential.
| Item Type: | Journal Item |
|---|---|
| Copyright Holders: | 2015 Hydrogen Energy Publications, LLC |
| ISSN: | 0360-3199 |
| Keywords: | bismuth vanadate; hydrogen treatment; photoelectrochemical; rf-sputtering |
| Academic Unit/School: | Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation Faculty of Science, Technology, Engineering and Mathematics (STEM) |
| Item ID: | 42514 |
| Depositing User: | Satheesh Krishnamurthy |
| Date Deposited: | 17 Apr 2015 10:13 |
| Last Modified: | 16 Apr 2019 16:17 |
| URI: | http://oro.open.ac.uk/id/eprint/42514 |
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