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Characterisation of a CMOS charge transfer device for TDI imaging

Rushton, J.; Holland, A.; Stefanov, K. and Mayer, F. (2015). Characterisation of a CMOS charge transfer device for TDI imaging. Journal of Instrumentation, 10(3), article no. C03027.

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The performance of a prototype true charge transfer imaging sensor in CMOS is investigated. The finished device is destined for use in TDI applications, especially Earth-observation, and to this end radiation tolerance must be investigated. Before this, complete characterisation is required. This work starts by looking at charge transfer inefficiency and then investigates responsivity using mean-variance techniques.

Item Type: Journal Item
Copyright Holders: 2015 IOP Publishing Ltd and Sissa Medialab srl
ISSN: 1748-0221
Extra Information: Part of 10th International Conference on Position Sensitive Detectors

6 pp.
Keywords: TDI; CMOS; charge transfer; mean variance; photon transfer
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Centre for Electronic Imaging (CEI)
Item ID: 42484
Depositing User: Joseph Rushton
Date Deposited: 14 Apr 2015 10:45
Last Modified: 08 Dec 2018 14:00
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