The Open UniversitySkip to content

Simulations of charge transfer in Electron Multiplying Charge Coupled Devices

Bush, N.; Stefanov, K.; Hall, D.; Jordan, D. and Holland, A. (2014). Simulations of charge transfer in Electron Multiplying Charge Coupled Devices. Journal of Instrumentation, 9(12), article no. C12042.

Full text available as:
PDF (Accepted Manuscript) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (751kB) | Preview
DOI (Digital Object Identifier) Link:
Google Scholar: Look up in Google Scholar


Electron Multiplying Charge Coupled Devices (EMCCDs) are a variant of traditional CCD technology well suited to applications that demand high speed operation in low light conditions. On-chip signal amplification allows the sensor to effectively suppress the noise introduced by readout electronics, permitting sub-electron read noise at MHz pixel rates. The devices have been the subject of many detailed studies concerning their operation, however there has not been a study into the transfer and multiplication process within the EMCCD gain register. Such an investigation has the potential to explain certain observed performance characteristics, as well as inform further optimisations to their operation. In this study, the results from simulation of charge transfer within an EMCCD gain register element are discussed with a specific focus on the implications for serial charge transfer efficiency (CTE). The effects of operating voltage and readout speed are explored in context with typical operating conditions. It is shown that during transfer, a small portion of signal charge may become trapped at the semiconductor-insulator interface that could act to degrade the serial CTE in certain operating conditions.

Item Type: Journal Item
Copyright Holders: 2014 IOP Publishing Ltd and Sissa Medialab srl
ISSN: 1748-0221
Project Funding Details:
Funded Project NameProject IDFunding Body
Simulation and Measurement of Charge Transfer in Advanced Semiconductor Imaging Sensors. (SP-12-121-DH)ST/K005634/1STFC
Keywords: charge transport and multiplication in solid media; UV; photon detectors; IR photons; EM-CCD; electron multiplication; charge transfer efficiency; interface defects; photon-counting
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Centre for Electronic Imaging (CEI)
Item ID: 42331
Depositing User: Nathan Bush
Date Deposited: 13 Mar 2015 10:36
Last Modified: 08 Dec 2018 13:20
Share this page:


Altmetrics from Altmetric

Citations from Dimensions

Download history for this item

These details should be considered as only a guide to the number of downloads performed manually. Algorithmic methods have been applied in an attempt to remove automated downloads from the displayed statistics but no guarantee can be made as to the accuracy of the figures.

Actions (login may be required)

Policies | Disclaimer

© The Open University   contact the OU