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Inhibition of electromigration in eutectic SnBi solder interconnect by plastic prestraining

Zhang, X. F.; Liu, H.Y.; Guo, J. D. and Shang, J. K. (2011). Inhibition of electromigration in eutectic SnBi solder interconnect by plastic prestraining. Journal of Materials Science & Technology, 27(11) pp. 1072–1076.

DOI (Digital Object Identifier) Link: https://doi.org/10.1016/S1005-0302(11)60188-6
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Abstract

Plastic prestraining was applied to a solder interconnect to introduce internal defects such as dislocations in order to investigate the interaction of dislocations with electromigration damage. Above a critical prestrain, Bi interfacial segregation to the anode, a clear indication of electromigration damage in SnBi solder interconnect, was effectively prevented. Such an inhibiting effect is apparently contrary to the common notion that dislocations often act as fast diffusion paths. It is suggested that the dislocations introduced by plastic prestraining acted as sinks for vacancies in the early stage of the electromigration process, but as the vacancies accumulated at the dislocations, climb of those dislocations prompted recovery of the deformed samples under current stressing, greatly decreasing the density of dislocation and vacancy in the solder, leading to slower diffusion of Bi atoms.

Item Type: Journal Item
Copyright Holders: 2011 The Chinese Society for Metals
Keywords: electromigration; interfacial segregation; prestrain; dislocation; vacancy
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID: 41913
Depositing User: Xinfang Zhang
Date Deposited: 11 Feb 2015 14:56
Last Modified: 04 Oct 2016 11:42
URI: http://oro.open.ac.uk/id/eprint/41913
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