The Open UniversitySkip to content
 

Modelling and testing the x-ray performance of CCD and CMOS APS detectors using numerical finite element simulations

Weatherill, Daniel P.; Stefanov, Konstantin D.; Greig, Thomas A. and Holland, Andrew D. (2014). Modelling and testing the x-ray performance of CCD and CMOS APS detectors using numerical finite element simulations. In: SPIE Proceedings, 9154, article no. 91541A.

Full text available as:
[img]
Preview
PDF (Accepted Manuscript) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (9MB) | Preview
DOI (Digital Object Identifier) Link: https://doi.org/10.1117/12.2056302
Google Scholar: Look up in Google Scholar

Abstract

Pixellated monolithic silicon detectors operated in a photon-counting regime are useful in spectroscopic imaging applications. Since a high energy incident photon may produce many excess free carriers upon absorption, both energy and spatial information can be recovered by resolving each interaction event. The performance of these devices in terms of both the energy and spatial resolution is in large part determined by the amount of diffusion which occurs during the collection of the charge cloud by the pixels. Past efforts to predict the X-ray performance of imaging sensors have used either analytical solutions to the diffusion equation or simplified monte carlo electron transport models. These methods are computationally attractive and highly useful but may be complemented using more physically detailed models based on TCAD simulations of the devices. Here we present initial results from a model which employs a full transient numerical solution of the classical semiconductor equations to model charge collection in device pixels under stimulation from initially Gaussian photogenerated charge clouds, using commercial TCAD software. Realistic device geometries and doping are included. By mapping the pixel response to different initial interaction positions and charge cloud sizes, the charge splitting behaviour of the model sensor under various illuminations and operating conditions is investigated. Experimental validation of the model is presented from an e2v CCD30-11 device under varying substrate bias, illuminated using an Fe-55 source.

Item Type: Conference or Workshop Item
Copyright Holders: 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
ISSN: 0277-786X
Extra Information: From Conference Volume 9154

High Energy, Optical, and Infrared Detectors for Astronomy VI
Andrew D. Holland; James Beletic
Montréal, Quebec, Canada | June 22, 2014
Keywords: modeling; sensors; simulations; X-rays; TCAD; diffusion; doping; electron transport; absorption; clouds
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Centre for Electronic Imaging (CEI)
Space
Related URLs:
Item ID: 41857
Depositing User: Daniel Weatherill
Date Deposited: 16 Jan 2015 11:03
Last Modified: 07 Dec 2018 11:26
URI: http://oro.open.ac.uk/id/eprint/41857
Share this page:

Metrics

Altmetrics from Altmetric

Citations from Dimensions

Download history for this item

These details should be considered as only a guide to the number of downloads performed manually. Algorithmic methods have been applied in an attempt to remove automated downloads from the displayed statistics but no guarantee can be made as to the accuracy of the figures.

Actions (login may be required)

Policies | Disclaimer

© The Open University   contact the OU