The Open UniversitySkip to content
 

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Londos, C. A.; Sgourou, E. N.; Hall, D. and Chroneos, A. (2014). Vacancy-oxygen defects in silicon: the impact of isovalent doping. Journal of Materials Science: Materials in Electronics, 25(6) pp. 2395–2410.

Full text available as:
Full text not publicly available
Due to copyright restrictions, this file is not available for public download
DOI (Digital Object Identifier) Link: https://doi.org/10.1007/s10854-014-1947-6
Google Scholar: Look up in Google Scholar

Abstract

Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail.

Item Type: Journal Item
Copyright Holders: 2014 Springer Science+Business Media
ISSN: 1573-482X
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Interdisciplinary Research Centre: Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR)
Item ID: 40649
Depositing User: David Hall
Date Deposited: 30 Jul 2014 13:08
Last Modified: 01 Nov 2017 15:49
URI: http://oro.open.ac.uk/id/eprint/40649
Share this page:

Altmetrics

Actions (login may be required)

Policies | Disclaimer

© The Open University   contact the OU