Ultra high hole mobilities in a pure strained Ge quantum well

Mironov, O. A.; Hassan, A. H. A.; Morris, R. J. H.; Dobbie, A.; Uhlarz, M.; Chrastina, D.; Hague, J. P.; Kiatgamolchai, S.; Beanland, R.; Gabani, S.; Berkutov, I. B.; Helm, M.; Drachenko, O.; Myronov, M. and Leadley, D. R. (2014). Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, 557 pp. 329–333.

DOI: https://doi.org/10.1016/j.tsf.2013.10.118

Abstract

Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were − 14 T < B < + 14 T and 1.5 K < T < 300 K respectively. Using maximum entropy-mobility spectrum analysis (ME-MSA) and Bryan's algorithm mobility spectrum (BAMS) analysis, a RT two dimensional hole gas drift mobility of (3.9 ± 0.4) × 10³ cm²/V s was determined for a sheet density (p_s) 9.8 × 10¹⁰ cm^-2 (by ME-MSA) and (3.9 ± 0.2) × 10³ cm²/V s for a sheet density (p_s) 5.9 × 10¹⁰ cm^-2 (by BAMS).

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About

• Item ORO ID
• 40398
• Item Type
• Journal Item
• ISSN
• 0040-6090
• Extra Information
• The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
• Keywords
• strained Ge; ME-MSA; BAMS; drift mobility; Ge QW channel
• Academic Unit or School
• Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
  Faculty of Science, Technology, Engineering and Mathematics (STEM)
• Research Group
• Physics
• Copyright Holders
• © 2013 The Authors
• Depositing User
• James Hague