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Ultra high hole mobilities in a pure strained Ge quantum well

Mironov, O. A.; Hassan, A. H. A.; Morris, R. J. H.; Dobbie, A.; Uhlarz, M.; Chrastina, D.; Hague, J. P.; Kiatgamolchai, S.; Beanland, R.; Gabani, S.; Berkutov, I. B.; Helm, M.; Drachenko, O.; Myronov, M. and Leadley, D. R. (2014). Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, 557 pp. 329–333.

DOI (Digital Object Identifier) Link: https://doi.org/10.1016/j.tsf.2013.10.118
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Abstract

Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were − 14 T < B < + 14 T and 1.5 K < T < 300 K respectively. Using maximum entropy-mobility spectrum analysis (ME-MSA) and Bryan's algorithm mobility spectrum (BAMS) analysis, a RT two dimensional hole gas drift mobility of (3.9 ± 0.4) × 103 cm2/V s was determined for a sheet density (ps) 9.8 × 1010 cm-2 (by ME-MSA) and (3.9 ± 0.2) × 103 cm2/V s for a sheet density (ps) 5.9 × 1010 cm-2 (by BAMS).

Item Type: Journal Item
Copyright Holders: 2013 The Authors
ISSN: 0040-6090
Extra Information: The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
Keywords: strained Ge; ME-MSA; BAMS; drift mobility; Ge QW channel
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Physics
Item ID: 40398
Depositing User: James Hague
Date Deposited: 12 Jun 2014 08:22
Last Modified: 07 Dec 2018 10:23
URI: http://oro.open.ac.uk/id/eprint/40398
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