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Bias free gap creation in bilayer graphene

Davenport, A. R. and Hague, J. P. (2014). Bias free gap creation in bilayer graphene. Journal of Physics: Condensed Matter, 26(22), article no. 225601.

DOI (Digital Object Identifier) Link: https://doi.org/10.1088/0953-8984/26/22/225601
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Abstract

For graphene to be utilized in the digital electronics industry the challenge is to create bandgaps of order 1 eV as simply as possible. The most successful methods for the creation of gaps in graphene are (a) confining the electrons in nanoribbons, which is technically difficult or (b) placing a potential difference across bilayer graphene, which is limited to gaps of around 300 meV for reasonably sized electric fields. Here we propose that electronic band gaps can be created without applying an external electric field, by using the electron–phonon interaction formed when bilayer graphene is sandwiched between highly polarisable ionic materials. We derive and solve self-consistent equations, finding that a large gap can be formed for intermediate electron–phonon coupling. The gap originates from the amplification of an intrinsic Coulomb interaction due to the proximity of carbon atoms in neighbouring planes.

Item Type: Journal Item
Copyright Holders: 2014 IOP Publishing Ltd
ISSN: 1361-648X
Project Funding Details:
Funded Project NameProject IDFunding Body
Substrate and polaronic band engineering for advanced graphene electronicsEP/H015655/1EPSRC (Engineering and Physical Sciences Research Council)
Extra Information: 8 pp.
Keywords: bilayer graphene; electron–phonon interaction; electron band gap; bias free; correlated electrons
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Physics
Item ID: 40397
Depositing User: James Hague
Date Deposited: 12 Jun 2014 08:33
Last Modified: 07 Dec 2018 10:23
URI: http://oro.open.ac.uk/id/eprint/40397
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