The Open UniversitySkip to content

Methods of Making Gold Nitride

Siller, Lidija; Krishnamurthy, Satheesh and Chao, Yimin (2008). Methods of Making Gold Nitride. Satheesh Krishnamurthy, US20080264776 A1,EP1756327 B1.

Google Scholar: Look up in Google Scholar


A method of treating a gold film to form gold nitride is proposed, which includes the steps of: generating a nitrogen plasma with a radio frequency field and a power of less than or equal to about 2 kW; and treating said gold film with said nitrogen plasma. The method can be carried out using commercially available apparatus such as an etching machine. The radio frequency field is preferably between 10 and 17 MHz, and the power used to generate the nitrogen plasma is preferably less than or equal to 300 W. The gold film may be biased to achieve directional attack of the plasma. A further method of forming gold nitride is proposed which includes the step of sputtering from a gold target with a nitrogen plasma to form a film of gold nitride on a substrate.

Item Type: Patent
Copyright Holders: Lidija Siller, Satheesh Krishnamurthy, Yimin Chao
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID: 38803
Depositing User: Satheesh Krishnamurthy
Date Deposited: 25 Oct 2013 14:08
Last Modified: 07 Dec 2018 10:19
Share this page:

Actions (login may be required)

Policies | Disclaimer

© The Open University   contact the OU