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Reactions and luminescence in passivated Si nanocrystallites induced by vacuum ultraviolet and soft-x-ray photons

Chao, Y.; Krishnamurthy, S.; Montalti, M.; Lie, L. H.; Houlton, A.; Horrocks, B. R.; Kjeldgaard, L.; Dhanak, V. R.; Hunt, M. R. C. and Šiller, L. (2005). Reactions and luminescence in passivated Si nanocrystallites induced by vacuum ultraviolet and soft-x-ray photons. Journal of Applied Physics, 98(4), article no. 044316.

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Alkyl-modified silicon nanocrystallites are efficient fluorophores which are of interest for fundamental spectroscopic studies and as luminescent probes in biology because of their stability in aqueous media. In this work we have investigated these particles using scanning tunneling microscopy, synchrotron-radiation excited photoemission, and x-ray excited optical luminescence (XEOL). During the course of illumination with 145-eV photons we have monitored the evolution of the Si2p core level and, in samples which have suffered prolonged atmospheric exposure, observed in real time the growth of an extra Si2p component attributed to in situ photoinduced oxidation of the Si nanocrystallites. XEOL reveals that two emission bands are active upon soft-x-ray photon excitation and that photoluminescence intensity decreases with photon exposure, which is attributed to charge trapping within the film.

Item Type: Journal Item
Copyright Holders: 2005 American Institute of Physics
ISSN: 1089-7550
Extra Information: 8 pp.
Keywords: silicon; elemental semiconductors; nanostructured materials; crystallites; photoluminescence; scanning tunnelling microscopy; core levels; passivation; oxidation; photoemission; X-ray effects; ultraviolet radiation effects
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID: 38648
Depositing User: Satheesh Krishnamurthy
Date Deposited: 02 Oct 2013 13:56
Last Modified: 08 Dec 2018 05:05
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