Soft x-ray spectroscopic investigation of Zn doped CuCl produced by pulsed dc magnetron sputtering

Rajani, K. V.; Daniels, S.; McNally, P. J. and Krishnamurthy, S. (2013). Soft x-ray spectroscopic investigation of Zn doped CuCl produced by pulsed dc magnetron sputtering. Journal of Physics: Condensed Matter, 25(28), article no. 285501.

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URL:	http://iopscience.iop.org/0953-8984/25/28/285501
DOI (Digital Object Identifier) Link:	https://doi.org/10.1088/0953-8984/25/28/285501
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Abstract

We report on a systematic investigation of the electronic properties of UV-light emitting Zn doped CuCl thin films implemented using near edge x-ray absorption fine structures (NEXAFS) and high-resolution x-ray photoemission spectroscopy. A clear shift of the valence band maximum towards higher binding energy by 0.2 ± 0.1 eV was observed in Zn doped CuCl as compared to undoped CuCl. This shift is in correlation with the increase in conductivity measured by the Hall effect measurements. A decrease in the optical band gap of CuCl film is also observed as a function of Zn doping. The profound changes in the full width at half maximum and the gradual disappearance of satellite features of Cu 2p core level photoemission as a function of Zn dopant are attributed to the reduced presence of the surface layer of Cu²⁺ species with d⁹ configuration in the doped films. These investigations help us to understand the doping mechanisms and underlying physics. The reduced presence of the Cu²⁺ related surface layer as a function of Zn doping is also verified using NEXAFS.

Item Type:	Journal Item
Copyright Holders:	2013 IOP Publishing Ltd
ISSN:	1361-648X
Keywords:	condensed matter; semiconductors; surfaces
Academic Unit/School:	Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID:	37854
Depositing User:	Satheesh Krishnamurthy
Date Deposited:	28 Jun 2013 08:29
Last Modified:	09 Dec 2018 08:34
URI:	http://oro.open.ac.uk/id/eprint/37854
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