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The thermoelectric properties of Ge/SiGe modulation doped superlattices

Samarelli, A.; Ferre Llin, L.; Cecchi, S.; Frigerio, J.; Etzelstorfer, T.; Müller, E.; Zhang, Y.; Watling, J. R.; Chrastina, D.; Isella, G.; Stangl, J.; Hague, J. P.; Weaver, J. M. R.; Dobson, P. and Paul, D. J. (2013). The thermoelectric properties of Ge/SiGe modulation doped superlattices. Journal of Applied Physics, 113(23), article no. 233704.

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The thermoelectric and physical properties of superlattices consisting of modulation doped Ge quantum wells inside Si1−yGey barriers are presented, which demonstrate enhancements in the thermoelectric figure of merit, ZT, and power factor at room temperature over bulk Ge, Si1−yGey, and Si/Ge superlattice materials. Mobility spectrum analysis along with low temperature measurements indicate that the high power factors are dominated by the high electrical conductivity from the modulation doping. Comparison of the results with modelling using the Boltzmann transport equation with scattering parameters obtained from Monte Carlo techniques indicates that a high threading dislocation density is also limiting the performance. The analysis suggests routes to higher thermoelectric performance at room temperature from Si-based materials that can be fabricated using micro- and nano-fabrication techniques.

Item Type: Journal Item
Copyright Holders: 2013 AIP Publishing LLC
ISSN: 0021-8979
Keywords: Boltzmann equation; dislocation density; electrical conductivity; germanium; Ge-Si alloys; Monte Carlo methods; nanofabrication; semiconductor quantum wells; semiconductor superlattices; thermoelectricity
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Physics
Item ID: 37837
Depositing User: James Hague
Date Deposited: 24 Jun 2013 08:45
Last Modified: 07 Dec 2018 10:16
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