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Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

Meilkhova, O.; Čížek, J.; Lukáč,, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S. and Mosnier, J.-P. (2013). Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition. Journal of Alloys and Compounds, 580(Sup. 1) S40-S43.

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URL: http://www.sciencedirect.com/science/article/pii/S...
DOI (Digital Object Identifier) Link: https://doi.org/10.1016/j.jallcom.2013.01.121
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Abstract

ZnO films with thickness of ~80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO

Item Type: Journal Item
Copyright Holders: 2013 Elsevier B.V.
ISSN: 1873-4669
Keywords: ZnO; thin films; hydrogen; positron annihilation; defects
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID: 36962
Depositing User: Satheesh Krishnamurthy
Date Deposited: 25 Mar 2013 10:51
Last Modified: 19 Mar 2017 10:19
URI: http://oro.open.ac.uk/id/eprint/36962
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