Meilkhova, O.; Čížek, J.; Lukáč,, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S. and Mosnier, J.-P.
(2013).
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| URL: | http://www.sciencedirect.com/science/article/pii/S... |
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| DOI (Digital Object Identifier) Link: | https://doi.org/10.1016/j.jallcom.2013.01.121 |
| Google Scholar: | Look up in Google Scholar |
Abstract
ZnO films with thickness of ~80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO
| Item Type: | Journal Item |
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| Copyright Holders: | 2013 Elsevier B.V. |
| ISSN: | 1873-4669 |
| Keywords: | ZnO; thin films; hydrogen; positron annihilation; defects |
| Academic Unit/School: | Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation Faculty of Science, Technology, Engineering and Mathematics (STEM) |
| Item ID: | 36962 |
| Depositing User: | Satheesh Krishnamurthy |
| Date Deposited: | 25 Mar 2013 10:51 |
| Last Modified: | 02 May 2018 13:50 |
| URI: | http://oro.open.ac.uk/id/eprint/36962 |
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