Moore, D.; Krishnamurthy, S.; Chao, Y.; Wang, Q.; Brabazon, D. and McNally, P. J.
Characteristics of silicon nanocrystals for photovoltaic applications.
Physica Status Solidi (A) Applications and Materials Science, 208(3) pp. 604–607.
Over the last decade the progress in amorphous and nanocrystalline silicon (nc-Si) for photovoltaic applications received significant interest in science and technology. Advances in the understanding of these novel materials and their properties are growing rapidly. In order to realise nc-Si in the solar cell, a thicker intrinsic layer is required. Due to the indirect band gap in the crystallites, the absorption coefficients of nc-Si are much lower. In this work we have used electrochemical etching techniques to produce silicon nanocrystals of the sizes 3-5 nm. Viable drop cast deposition of Si nanocrystals to increase the thickness without compromising the material properties was investigated by atomic force microscopy, optical microscopy, photoemission spectroscopy and optical absorption methods.
||2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
|Project Funding Details:
|Funded Project Name||Project ID||Funding Body|
|Not Set||Not Set||Irish Research Council for Science, Engineering and Technology|
|Not Set||Not Set||Higher Education Authority Program for Research in Third Level Institutions (2007–2011)|
||absorption coefficients; amorphous and nanocrystalline silicon; drop-cast; electrochemical etching techniques; indirect band gap; intrinsic layer; material property; nanocrystalline; novel materials; optical absorption; photoemission spectroscopy; photovoltaic applications; photovoltaics; quantum dots; science and technology; Si nanocrystal; silicon nanocrystals, absorption; absorption spectroscopy; atomic force microscopy; atomic spectroscopy; emission spectroscopy; light absorption; materials properties; nanocrystalline silicon; nanocrystals; optical microscopy; optical waveguides; photovoltaic effects; semiconductor quantum dots; amorphous silicon
||Mathematics, Computing and Technology > Engineering & Innovation
||16 Nov 2012 13:56
||16 Nov 2012 13:56
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