Arnold, B.J.; Krishnamurthy, S.; Kennedy, B.; Cockburn, D.; McNally, D.; Lunney, J.G.; Gunning, R.; Venkatesan, M.; Alaria, J.; Michael, J.; Coey, D.; McGuinnessy, C. and Guo, J.-H.
|DOI (Digital Object Identifier) Link:||http://doi.org/10.1380/ejssnt.2009.497|
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Thin films of AlN, CrN and Al 1-xCr xN were grown epitaxially on c-cut sapphire by radio frequency (RF) plasma assisted pulsed laser deposition (PLD). The PLD growth mode employed for these Al 1-xCr xN films was by delta doping layers of CrN 0.05-0.10 nm thick between layers of AlN of approximately 3.6 nm thick giving an estimated 1.3% and 2.5% Cr doping. The substrate temperature, nitrogen pressure and power parameters of the RF plasma were varied to optimize crystalline growth. X-ray diffraction (XRD) confirmed hexagonal wurtzite thin film growth of highly crystalline AlN and highly crystalline cubic CrN. The electronic structure of these thin films was examined by x-ray absorption (XAS) and soft x-ray emission spectroscopy (XES) at the N K edge. These measurements are compared with the results of density functional calculations for wurtzite-AlN, cubic-CrN and wurtzite-Al 1-xCr xN.
|Item Type:||Journal Article|
|Copyright Holders:||2009 The Surface Science Society of Japan.|
|Keywords:||near edge extended x-ray absorption fine structure (NEXAFS); nitrides; pulsed laser deposition; single crystal epitaxy; X-ray emission|
|Academic Unit/Department:||Mathematics, Computing and Technology > Engineering & Innovation
Mathematics, Computing and Technology
|Depositing User:||Satheesh Krishnamurthy|
|Date Deposited:||19 Nov 2012 09:13|
|Last Modified:||18 Jan 2016 16:01|
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