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Growth and characterisation of Al 1-xCr xN thin films by RF plasma assisted pulsed laser deposition

Arnold, B.J.; Krishnamurthy, S.; Kennedy, B.; Cockburn, D.; McNally, D.; Lunney, J.G.; Gunning, R.; Venkatesan, M.; Alaria, J.; Michael, J.; Coey, D.; McGuinnessy, C. and Guo, J.-H. (2009). Growth and characterisation of Al 1-xCr xN thin films by RF plasma assisted pulsed laser deposition. e-Journal of Surface Science and Nanotechnology, 7 pp. 497–502.

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Thin films of AlN, CrN and Al 1-xCr xN were grown epitaxially on c-cut sapphire by radio frequency (RF) plasma assisted pulsed laser deposition (PLD). The PLD growth mode employed for these Al 1-xCr xN films was by delta doping layers of CrN 0.05-0.10 nm thick between layers of AlN of approximately 3.6 nm thick giving an estimated 1.3% and 2.5% Cr doping. The substrate temperature, nitrogen pressure and power parameters of the RF plasma were varied to optimize crystalline growth. X-ray diffraction (XRD) confirmed hexagonal wurtzite thin film growth of highly crystalline AlN and highly crystalline cubic CrN. The electronic structure of these thin films was examined by x-ray absorption (XAS) and soft x-ray emission spectroscopy (XES) at the N K edge. These measurements are compared with the results of density functional calculations for wurtzite-AlN, cubic-CrN and wurtzite-Al 1-xCr xN.

Item Type: Journal Article
Copyright Holders: 2009 The Surface Science Society of Japan.
ISSN: 1348-0391
Keywords: near edge extended x-ray absorption fine structure (NEXAFS); nitrides; pulsed laser deposition; single crystal epitaxy; X-ray emission
Academic Unit/Department: Mathematics, Computing and Technology > Engineering & Innovation
Mathematics, Computing and Technology
Item ID: 35390
Depositing User: Satheesh Krishnamurthy
Date Deposited: 19 Nov 2012 09:13
Last Modified: 18 Jan 2016 16:01
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