Chroneos, A.; Schwingenschlögl, U.; Schuster, C. and Grimes, R. W.
|DOI (Digital Object Identifier) Link:||http://dx.doi.org/10.1063/1.4747932|
|Google Scholar:||Look up in Google Scholar|
Charge transfer predicted by standard models is at odds with Pauling's electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlogl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.
|Item Type:||Journal Article|
|Copyright Holders:||2012 American Institute of Physics|
|Academic Unit/Department:||Mathematics, Computing and Technology > Engineering & Innovation
Mathematics, Computing and Technology
|Depositing User:||Alexander Chroneos|
|Date Deposited:||02 Nov 2012 12:22|
|Last Modified:||18 Jan 2016 15:58|
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