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Electronegativity and doping in semiconductors

Chroneos, A.; Schwingenschlögl, U.; Schuster, C. and Grimes, R. W. (2012). Electronegativity and doping in semiconductors. Journal of Applied Physics, 112(4) article 046101.

DOI (Digital Object Identifier) Link: http://dx.doi.org/10.1063/1.4747932
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Abstract

Charge transfer predicted by standard models is at odds with Pauling's electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlogl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.

Item Type: Journal Article
Copyright Holders: 2012 American Institute of Physics
ISSN: 0021-8979
Academic Unit/Department: Mathematics, Computing and Technology > Engineering & Innovation
Item ID: 35261
Depositing User: Alexander Chroneos
Date Deposited: 02 Nov 2012 12:22
Last Modified: 24 Apr 2013 09:29
URI: http://oro.open.ac.uk/id/eprint/35261
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