Strain-induced changes to the electronic structure of germanium

Chroneos, A.; Tahini, A.; Grimes, R. W.; Schwingenschlogl, U. and Dimoulas, A. (2012). Strain-induced changes to the electronic structure of germanium. Journal of Physics: Condensed Matter, 24(19) p. 195802.

DOI: https://doi.org/10.1088/0953-8984/24/19/195802

Abstract

Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications.

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