Chroneos, A.; Tahini, A.; Grimes, R. W.; Schwingenschlogl, U. and Dimoulas, A.
Strain-induced changes to the electronic structure of germanium.
Journal of Physics: Condensed Matter, 24(19) p. 195802.
Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the ,  and  directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the  direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications.
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