Chroneos, A.; Tahini, A.; Grimes, R. W.; Schwingenschlogl, U. and Dimoulas, A.
|DOI (Digital Object Identifier) Link:||https://doi.org/10.1088/0953-8984/24/19/195802|
|Google Scholar:||Look up in Google Scholar|
Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the ,  and  directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the  direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications.
|Item Type:||Journal Article|
|Copyright Holders:||2012 IOP PUBLISHING|
|Academic Unit/Department:||Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
|Depositing User:||Alexander Chroneos|
|Date Deposited:||06 Nov 2012 10:02|
|Last Modified:||19 Oct 2016 15:50|
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