The Open UniversitySkip to content
 

Strain-induced changes to the electronic structure of germanium

Chroneos, A.; Tahini, A.; Grimes, R. W.; Schwingenschlogl, U. and Dimoulas, A. (2012). Strain-induced changes to the electronic structure of germanium. Journal of Physics: Condensed Matter, 24(19) p. 195802.

DOI (Digital Object Identifier) Link: http://dx.doi.org/10.1088/0953-8984/24/19/195802
Google Scholar: Look up in Google Scholar

Abstract

Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications.

Item Type: Journal Article
Copyright Holders: 2012 IOP PUBLISHING
ISSN: 0953-8984
Academic Unit/Department: Mathematics, Computing and Technology > Engineering & Innovation
Item ID: 35257
Depositing User: Alexander Chroneos
Date Deposited: 06 Nov 2012 10:02
Last Modified: 07 Nov 2012 01:23
URI: http://oro.open.ac.uk/id/eprint/35257
Share this page:

Altmetrics

Scopus Citations

Actions (login may be required)

View Item
Report issue / request change

Policies | Disclaimer

© The Open University   + 44 (0)870 333 4340   general-enquiries@open.ac.uk