Chroneos, A.; Tahini, A.; Grimes, R. W.; Schwingenschlogl, U. and Dimoulas, A.
(2012).
Strain-induced changes to the electronic structure of germanium.
Journal of Physics: Condensed Matter, 24(19)
p. 195802.
Abstract
Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications.
Actions (login may be required)
