The Open UniversitySkip to content

Defect configurations of high-k cations in germanium

Chroneos, A. and Dimoulas, A. (2012). Defect configurations of high-k cations in germanium. Journal of Applied Physics, 111(2), article no. 023714.

Full text available as:
PDF (Version of Record) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (1276Kb) | Preview
DOI (Digital Object Identifier) Link:
Google Scholar: Look up in Google Scholar


At germanium/high-k interfaces cations and oxygen interstitials can diffuse into the germanium substrate. Here we employ density functional theory calculations to investigate the interaction of a range of such cations (Al, Y, Zr, Nb, La, and Hf) with intrinsic defects and oxygen in germanium. It is predicted that high-k cations strongly bind with lattice vacancies, oxygen interstitials, and A-centers. The implications for microelectronic device performance are discussed. (C) 2012 American Institute of Physics.

Item Type: Journal Article
Copyright Holders: 2012 American Institute of Physics
ISSN: 0021-8979
Extra Information: This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Academic Unit/Department: Mathematics, Computing and Technology > Engineering & Innovation
Mathematics, Computing and Technology
Item ID: 35255
Depositing User: Alexander Chroneos
Date Deposited: 06 Nov 2012 10:07
Last Modified: 25 Feb 2016 13:33
Share this page:


Scopus Citations

Actions (login may be required)

Policies | Disclaimer

© The Open University   + 44 (0)870 333 4340