Chroneos, A. and Dimoulas, A.
Defect configurations of high-k cations in germanium.
Journal of Applied Physics, 111(2)023714.
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At germanium/high-k interfaces cations and oxygen interstitials can diffuse into the germanium substrate. Here we employ density functional theory calculations to investigate the interaction of a range of such cations (Al, Y, Zr, Nb, La, and Hf) with intrinsic defects and oxygen in germanium. It is predicted that high-k cations strongly bind with lattice vacancies, oxygen interstitials, and A-centers. The implications for microelectronic device performance are discussed. (C) 2012 American Institute of Physics.
||2012 American Institute of Physics
||This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
||Mathematics, Computing and Technology > Engineering & Innovation
||06 Nov 2012 10:07
||15 May 2013 19:46
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