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Defect configurations of high-k cations in germanium

Chroneos, A. and Dimoulas, A. (2012). Defect configurations of high-k cations in germanium. Journal of Applied Physics, 111(2) article 023714.

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DOI (Digital Object Identifier) Link: http://dx.doi.org/10.1063/1.3679089
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Abstract

At germanium/high-k interfaces cations and oxygen interstitials can diffuse into the germanium substrate. Here we employ density functional theory calculations to investigate the interaction of a range of such cations (Al, Y, Zr, Nb, La, and Hf) with intrinsic defects and oxygen in germanium. It is predicted that high-k cations strongly bind with lattice vacancies, oxygen interstitials, and A-centers. The implications for microelectronic device performance are discussed. (C) 2012 American Institute of Physics.

Item Type: Journal Article
Copyright Holders: 2012 American Institute of Physics
ISSN: 0021-8979
Extra Information: This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Academic Unit/Department: Mathematics, Computing and Technology > Engineering & Innovation
Item ID: 35255
Depositing User: Alexander Chroneos
Date Deposited: 06 Nov 2012 10:07
Last Modified: 15 May 2013 19:46
URI: http://oro.open.ac.uk/id/eprint/35255
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