Chroneos, A. and Dimoulas, A.
(2012).
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| DOI (Digital Object Identifier) Link: | http://dx.doi.org/doi:10.1063/1.3679089 |
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Abstract
At germanium/high-k interfaces cations and oxygen interstitials can diffuse into the germanium substrate. Here we employ density functional theory calculations to investigate the interaction of a range of such cations (Al, Y, Zr, Nb, La, and Hf) with intrinsic defects and oxygen in germanium. It is predicted that high-k cations strongly bind with lattice vacancies, oxygen interstitials, and A-centers. The implications for microelectronic device performance are discussed. (C) 2012 American Institute of Physics.
| Item Type: | Journal Article |
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| Copyright Holders: | 2012 American Institute of Physics |
| ISSN: | 0021-8979 |
| Extra Information: | This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| Academic Unit/Department: | Mathematics, Computing and Technology > Design, Development, Environment and Materials |
| Item ID: | 35255 |
| Depositing User: | Alexander Chroneos |
| Date Deposited: | 06 Nov 2012 10:07 |
| Last Modified: | 15 May 2013 19:46 |
| URI: | http://oro.open.ac.uk/id/eprint/35255 |
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