Chroneos, A. and Dimoulas, A.
PDF (Version of Record)
- Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (1276Kb) | Preview
|DOI (Digital Object Identifier) Link:||http://dx.doi.org/doi:10.1063/1.3679089|
|Google Scholar:||Look up in Google Scholar|
At germanium/high-k interfaces cations and oxygen interstitials can diffuse into the germanium substrate. Here we employ density functional theory calculations to investigate the interaction of a range of such cations (Al, Y, Zr, Nb, La, and Hf) with intrinsic defects and oxygen in germanium. It is predicted that high-k cations strongly bind with lattice vacancies, oxygen interstitials, and A-centers. The implications for microelectronic device performance are discussed. (C) 2012 American Institute of Physics.
|Item Type:||Journal Article|
|Copyright Holders:||2012 American Institute of Physics|
|Extra Information:||This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.|
|Academic Unit/Department:||Mathematics, Computing and Technology > Design, Development, Environment and Materials|
|Depositing User:||Alexander Chroneos|
|Date Deposited:||06 Nov 2012 10:07|
|Last Modified:||15 May 2013 19:46|
Actions (login may be required)
|Report issue / request change|