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Point defect engineering strategies to suppress A-center formation in silicon

Chroneos, A.; Londos, C. A.; Sgourou, E. N. and Pochet, P. (2011). Point defect engineering strategies to suppress A-center formation in silicon. Applied Physics Letters, 99(24) p. 241901.

DOI (Digital Object Identifier) Link: http://dx.doi.org/10.1063/1.3666226
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Abstract

We investigate the impact of tin doping on the formation of vacancy-oxygen pairs ( VO or A-centers) and their conversion to VO(2) clusters in electron-irradiated silicon. The experimental results are consistent with previous reports that Sn doping suppresses the formation of the A-center. We introduce a model to account for the observed differences under both Sn-poor and Sn-rich doping conditions. Using density functional theory calculations, we propose point defect engineering strategies to reduce the concentration of the deleterious A-centers in silicon. We predict that doping with lead, zirconium, or hafnium will lead to the suppression of the A-centers.

Item Type: Journal Article
Copyright Holders: 2011 American Institute of Physics
ISSN: 1077-3118
Academic Unit/Department: Mathematics, Computing and Technology > Engineering & Innovation
Item ID: 35253
Depositing User: Alexander Chroneos
Date Deposited: 06 Nov 2012 10:17
Last Modified: 28 Jan 2014 10:09
URI: http://oro.open.ac.uk/id/eprint/35253
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