Chroneos, A.; Londos, C. A.; Sgourou, E. N. and Pochet, P.
|DOI (Digital Object Identifier) Link:||http://doi.org/10.1063/1.3666226|
|Google Scholar:||Look up in Google Scholar|
We investigate the impact of tin doping on the formation of vacancy-oxygen pairs ( VO or A-centers) and their conversion to VO(2) clusters in electron-irradiated silicon. The experimental results are consistent with previous reports that Sn doping suppresses the formation of the A-center. We introduce a model to account for the observed differences under both Sn-poor and Sn-rich doping conditions. Using density functional theory calculations, we propose point defect engineering strategies to reduce the concentration of the deleterious A-centers in silicon. We predict that doping with lead, zirconium, or hafnium will lead to the suppression of the A-centers.
|Item Type:||Journal Article|
|Copyright Holders:||2011 American Institute of Physics|
|Academic Unit/Department:||Mathematics, Computing and Technology > Engineering & Innovation
Mathematics, Computing and Technology
|Depositing User:||Alexander Chroneos|
|Date Deposited:||06 Nov 2012 10:17|
|Last Modified:||18 Jan 2016 15:58|
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