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Effect of carbon on dopant-vacancy pair stability in germanium

Chroneos, Alexander (2011). Effect of carbon on dopant-vacancy pair stability in germanium. Semiconductor Science and Technology , 26(9) 095017.

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Density functional theory calculations were used to study the interaction between carbon and isolated substitutional dopants (boron, gallium, aluminium, indium, silicon, tin, nitrogen, phosphorous, arsenic and antimony) and dopant-vacancy pairs in germanium. It is predicted that there is a range of different association preferences, with carbon being strongly bound in some cluster geometries and dopants and unbound in others. If dopant-carbon pairs form they can act as vacancy traps to form larger and bound clusters. As vacancies are important for diffusion and cluster formation in germanium, the results are discussed in view of recent experimental studies.

Item Type: Journal Article
Copyright Holders: 2011 IOP Publishing Ltd
Extra Information: 6 pp.
Academic Unit/Department: Mathematics, Computing and Technology > Engineering & Innovation
Mathematics, Computing and Technology
Item ID: 35246
Depositing User: Alexander Chroneos
Date Deposited: 09 Nov 2012 09:31
Last Modified: 18 Jan 2016 15:58
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