Chroneos, A. and Londos, C. A.
Interaction of A-centers with isovalent impurities in silicon.
Journal of Applied Physics, 107(9), article no. 093518.
An A-center is an oxygen interstitial atom near a lattice vacancy and is one of the most common impurity-defect pairs in Czochralski-grown silicon crystals. In the present study, density functional theory calculations have been used to predict the binding energies of A-centers that are at nearest neighbor (NN) and next NN sites to isovalent impurities (carbon, germanium, and tin) in silicon. Interestingly, we predict that the A-center is more bound in isovalent-doped and, in particular, tin-doped silicon. We calculate that most of the binding energy of these A-centers originates from the interaction between the isovalent atoms and the vacancies.
||2010 American Institute of Physics
||A-centres; binding energy; carbon; crystal growth from melt; density functional theory; elemental semiconductors; germanium; impurity-defect interactions; semiconductor doping; silicon, tin; vacancies (crystal)
||Mathematics, Computing and Technology > Engineering & Innovation
||08 Nov 2012 09:50
||25 Apr 2013 15:07
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