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Interaction of A-centers with isovalent impurities in silicon

Chroneos, A. and Londos, C. A. (2010). Interaction of A-centers with isovalent impurities in silicon. Journal of Applied Physics, 107(9), article no. 093518.

URL: http://jap.aip.org/resource/1/japiau/v107/i9/p0935...
DOI (Digital Object Identifier) Link: http://dx.doi.org/10.1063/1.3409888
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Abstract

An A-center is an oxygen interstitial atom near a lattice vacancy and is one of the most common impurity-defect pairs in Czochralski-grown silicon crystals. In the present study, density functional theory calculations have been used to predict the binding energies of A-centers that are at nearest neighbor (NN) and next NN sites to isovalent impurities (carbon, germanium, and tin) in silicon. Interestingly, we predict that the A-center is more bound in isovalent-doped and, in particular, tin-doped silicon. We calculate that most of the binding energy of these A-centers originates from the interaction between the isovalent atoms and the vacancies.

Item Type: Journal Article
Copyright Holders: 2010 American Institute of Physics
ISSN: 1089-7550
Keywords: A-centres; binding energy; carbon; crystal growth from melt; density functional theory; elemental semiconductors; germanium; impurity-defect interactions; semiconductor doping; silicon, tin; vacancies (crystal)
Academic Unit/Department: Mathematics, Computing and Technology > Engineering & Innovation
Item ID: 35201
Depositing User: Alexander Chroneos
Date Deposited: 08 Nov 2012 09:50
Last Modified: 25 Apr 2013 15:07
URI: http://oro.open.ac.uk/id/eprint/35201
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