Chroneos, A. and Londos, C. A.
|DOI (Digital Object Identifier) Link:||http://doi.org/10.1063/1.3409888|
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An A-center is an oxygen interstitial atom near a lattice vacancy and is one of the most common impurity-defect pairs in Czochralski-grown silicon crystals. In the present study, density functional theory calculations have been used to predict the binding energies of A-centers that are at nearest neighbor (NN) and next NN sites to isovalent impurities (carbon, germanium, and tin) in silicon. Interestingly, we predict that the A-center is more bound in isovalent-doped and, in particular, tin-doped silicon. We calculate that most of the binding energy of these A-centers originates from the interaction between the isovalent atoms and the vacancies.
|Item Type:||Journal Article|
|Copyright Holders:||2010 American Institute of Physics|
|Keywords:||A-centres; binding energy; carbon; crystal growth from melt; density functional theory; elemental semiconductors; germanium; impurity-defect interactions; semiconductor doping; silicon, tin; vacancies (crystal)|
|Academic Unit/Department:||Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
|Depositing User:||Alexander Chroneos|
|Date Deposited:||08 Nov 2012 09:50|
|Last Modified:||04 Oct 2016 11:22|
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