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Vacancy-indium clusters in implanted germanium

Chroneos, Alexander; Kube, R. V.; Bracht, H.; Grimes, R. W. and Schwingenschlögl, U. (2010). Vacancy-indium clusters in implanted germanium. Chemical Physics Letters, 490(1-3) pp. 38–40.

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Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, In(n)V(m). We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions.

Item Type: Journal Item
Copyright Holders: 2010 Elsevier B.V.
ISSN: 0009-2614
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID: 35200
Depositing User: Alexander Chroneos
Date Deposited: 08 Nov 2012 09:06
Last Modified: 02 May 2018 13:46
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