Kube, R.; Bracht, H.; Chroneos, A.; Posselt, M. and Schmidt, B.
Intrinsic and extrinsic diffusion of indium in germanium.
Journal of Applied Physics, 106(6) article 063534.
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Diffusion experiments with indium (In) in germanium (Ge) were performed in the temperature range between 550 and 900°C. Intrinsic and extrinsic doping levels were achieved by utilizing various implantation doses. Indium concentration profiles were recorded by means of secondary ion mass spectrometry and spreading resistance profiling. The observed concentration independent diffusion profiles are accurately described based on the vacancy mechanism with a singly negatively charged mobile In-vacancy complex. In accord with the experiment, the diffusion model predicts an effective In diffusion coefficient under extrinsic conditions that is a factor of 2 higher than under intrinsic conditions. The temperature dependence of intrinsic In diffusion yields an activation enthalpy of 3.51 eV and confirms earlier results of Dorner et al. [Z. Metallk. 73, 325 (1982)]. The value clearly exceeds the activation enthalpy of Ge self- diffusion and indicates that the attractive interaction between In and a vacancy does not extend to third nearest neighbor sites which confirms recent theoretical calculations. At low temperatures and high doping levels, the In profiles show an extended tail that could reflect an enhanced diffusion at the beginning of the annealing.
||2009 American Institute of Physics
||This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
||diffusion; elemental semiconductors; enthalpy; germanium; indium; secondary ion mass spectra; semiconductor doping; vacancies (crystal)
||Mathematics, Computing and Technology > Engineering & Innovation
||07 Nov 2012 14:39
||23 Apr 2013 07:52
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