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Fluorine codoping in germanium to suppress donor diffusion and deactivation

Chroneos, A.; Grimes, R. W. and Bracht, H. (2009). Fluorine codoping in germanium to suppress donor diffusion and deactivation. Journal of Applied Physics, 106(6), article no. 063707.

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URL: http://jap.aip.org/resource/1/japiau/v106/i6/p0637...
DOI (Digital Object Identifier) Link: http://dx.doi.org/10.1063/1.3224900
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Abstract

Electronic structure calculations are used to investigate the stability of fluorine-vacancy (Fn)Vm) clusters in germanium (Ge). Using mass action analysis, it is predicted that the FnVm clusters can remediate the concentration of free V considerably. Importantly, we find that F and P codoping leads to a reduction in the concentration of donor-vacancy (DV) pairs. These pairs are responsible for the atomic transport and the formation of DnV clusters that lead to a deactivation of donor atoms. The predictions are technologically significant as they point toward an approach by which V-mediated donor diffusion and the formation of inactive D(n)V clusters can be suppressed. This would result in shallow and fully electrically active n-type doped regions in Ge-based electronic devices.

Item Type: Journal Article
Copyright Holders: 2009 American Institute of Physics
ISSN: 1089-7550
Extra Information: This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Keywords: diffusion; electronic structure; elemental semiconductors; fluorine; germanium; phosphorus; semiconductor doping; vacancies (crystal)
Academic Unit/Department: Mathematics, Computing and Technology > Engineering & Innovation
Item ID: 35188
Depositing User: Alexander Chroneos
Date Deposited: 07 Nov 2012 14:32
Last Modified: 18 May 2013 01:27
URI: http://oro.open.ac.uk/id/eprint/35188
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