Chroneos, A.; Grimes, R. W. and Bracht, H.
Fluorine codoping in germanium to suppress donor diffusion and deactivation.
Journal of Applied Physics, 106(6)
Full text available as:
Electronic structure calculations are used to investigate the stability of fluorine-vacancy (Fn)Vm) clusters in germanium (Ge). Using mass action analysis, it is predicted that the FnVm clusters can remediate the concentration of free V considerably. Importantly, we find that F and P codoping leads to a reduction in the concentration of donor-vacancy (DV) pairs. These pairs are responsible for the atomic transport and the formation of DnV clusters that lead to a deactivation of donor atoms. The predictions are technologically significant as they point toward an approach by which V-mediated donor diffusion and the formation of inactive D(n)V clusters can be suppressed. This would result in shallow and fully electrically active n-type doped regions in Ge-based electronic devices.
||2009 American Institute of Physics
||This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
||diffusion; electronic structure; elemental semiconductors; fluorine; germanium; phosphorus; semiconductor doping; vacancies (crystal)
||Mathematics, Computing and Technology > Design, Development, Environment and Materials
||07 Nov 2012 14:32
||18 May 2013 01:27
Actions (login may be required)