Chroneos, A.; Grimes, R. W. and Bracht, H.
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|DOI (Digital Object Identifier) Link:||https://doi.org/10.1063/1.3224900|
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Electronic structure calculations are used to investigate the stability of fluorine-vacancy (Fn)Vm) clusters in germanium (Ge). Using mass action analysis, it is predicted that the FnVm clusters can remediate the concentration of free V considerably. Importantly, we find that F and P codoping leads to a reduction in the concentration of donor-vacancy (DV) pairs. These pairs are responsible for the atomic transport and the formation of DnV clusters that lead to a deactivation of donor atoms. The predictions are technologically significant as they point toward an approach by which V-mediated donor diffusion and the formation of inactive D(n)V clusters can be suppressed. This would result in shallow and fully electrically active n-type doped regions in Ge-based electronic devices.
|Item Type:||Journal Article|
|Copyright Holders:||2009 American Institute of Physics|
|Extra Information:||This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.|
|Keywords:||diffusion; electronic structure; elemental semiconductors; fluorine; germanium; phosphorus; semiconductor doping; vacancies (crystal)|
|Academic Unit/Department:||Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
|Depositing User:||Alexander Chroneos|
|Date Deposited:||07 Nov 2012 14:32|
|Last Modified:||07 Oct 2016 09:36|
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