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E centers in ternary Si1-x-yGexSny random alloys

Chroneos, A.; Jiang, C.; Grimes, R. W.; Schwingenschlögl, U. and Bracht, H. (2009). E centers in ternary Si1-x-yGexSny random alloys. Applied Physics Letters, 95(11) p. 112101.

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DOI (Digital Object Identifier) Link: http://doi.org/10.1063/1.3224894
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Abstract

Density functional theory calculations are used to study the association of arsenic (As) atoms to lattice vacancies and the formation of As-vacancy pairs, known as E centers, in the random Si0.375Ge0.5Sn0.125 alloy. The local environments are described by 32-atom special quasirandom structures that represent random Si1-x-yGexSny alloys. It is predicted that the nearest-neighbor environment will exert a strong influence on the stability of E centers in ternary Si0.375Ge0.5Sn0.125.

Item Type: Journal Article
Copyright Holders: 2009 American Institute of Physics
ISSN: 1077-3118
Academic Unit/Department: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID: 35187
Depositing User: Alexander Chroneos
Date Deposited: 07 Nov 2012 14:23
Last Modified: 03 Aug 2016 02:34
URI: http://oro.open.ac.uk/id/eprint/35187
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