The Open UniversitySkip to content
 

Defect interactions in Sn1-xGex random alloys

Chroneos, A.; Jiang, C.; Schwingenschlögl, U. and Bracht, H. (2009). Defect interactions in Sn1-xGex random alloys. Applied Physics Letters, 94(25) p. 252104.

Full text available as:
[img]
Preview
PDF (Version of Record) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (152Kb) | Preview
DOI (Digital Object Identifier) Link: http://dx.doi.org/10.1063/1.3159468
Google Scholar: Look up in Google Scholar

Abstract

Sn1-xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of Sn1-xGex with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard's Law are consistent with experimental results.

Item Type: Journal Article
Copyright Holders: 2009 American Institute of Physics
ISSN: 1077-3118
Academic Unit/Department: Mathematics, Computing and Technology > Engineering & Innovation
Item ID: 35186
Depositing User: Alexander Chroneos
Date Deposited: 07 Nov 2012 14:10
Last Modified: 24 Apr 2013 17:13
URI: http://oro.open.ac.uk/id/eprint/35186
Share this page:

Altmetrics

Scopus Citations

Actions (login may be required)

View Item
Report issue / request change

Policies | Disclaimer

© The Open University   + 44 (0)870 333 4340   general-enquiries@open.ac.uk