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Defect interactions in Sn1-xGex random alloys

Chroneos, A.; Jiang, C.; Schwingenschlögl, U. and Bracht, H. (2009). Defect interactions in Sn1-xGex random alloys. Applied Physics Letters, 94(25) p. 252104.

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Sn1-xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of Sn1-xGex with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard's Law are consistent with experimental results.

Item Type: Journal Item
Copyright Holders: 2009 American Institute of Physics
ISSN: 1077-3118
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID: 35186
Depositing User: Alexander Chroneos
Date Deposited: 07 Nov 2012 14:10
Last Modified: 08 Dec 2018 01:53
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