Chroneos, A.; Jiang, C.; Schwingenschlögl, U. and Bracht, H.
PDF (Version of Record)
- Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (152Kb) | Preview
|DOI (Digital Object Identifier) Link:||https://doi.org/10.1063/1.3159468|
|Google Scholar:||Look up in Google Scholar|
Sn1-xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of Sn1-xGex with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard's Law are consistent with experimental results.
|Item Type:||Journal Article|
|Copyright Holders:||2009 American Institute of Physics|
|Academic Unit/Department:||Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
|Depositing User:||Alexander Chroneos|
|Date Deposited:||07 Nov 2012 14:10|
|Last Modified:||06 Oct 2016 04:57|
|Share this page:|
Download history for this item
These details should be considered as only a guide to the number of downloads performed manually. Algorithmic methods have been applied in an attempt to remove automated downloads from the displayed statistics but no guarantee can be made as to the accuracy of the figures.