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Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium

Chroneos, Alexander (2009). Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium. Journal of Applied Physics, 105(5), article no. 056101.

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DOI (Digital Object Identifier) Link: http://dx.doi.org/10.1063/1.3086664
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Abstract

Recent experimental studies demonstrate a significant germanium (Ge) substrate loss and consequently dopant loss even during low temperature annealing. Additionally, for phosphorous (P) implanted Ge the capping layer material affects P diffusion. Silicon nitride (Si3N4) capping is more efficient compared to silicon dioxide (SiO2) capping, but an accumulation of P is observed at the Ge/Si3N4 interface. In the present study, the recent experimental evidence is evaluated and with the use of electronic structure simulations the formation of relevant defects is investigated. It is predicted that the formation of clusters containing nitrogen (N) and vacancies (V) can be related to the observed accumulation of P atoms near the Ge/Si3N4 interface.

Item Type: Journal Article
Copyright Holders: 2009 American Institute of Physics
ISSN: 0021-8979
Extra Information: This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Academic Unit/Department: Mathematics, Computing and Technology > Engineering & Innovation
Item ID: 35181
Depositing User: Alexander Chroneos
Date Deposited: 07 Nov 2012 13:04
Last Modified: 23 Apr 2013 10:02
URI: http://oro.open.ac.uk/id/eprint/35181
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