Chroneos, A.; Bracht, H.; Jiang, C. and Uberuaga, B. P.
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|DOI (Digital Object Identifier) Link:||https://doi.org/10.1103/PhysRevB.78.195201|
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Electronic structure calculations are used to investigate the binding energies of defect pairs composed of lattice vacancies and phosphorus or arsenic atoms (E centers) in silicon-germanium alloys. To describe the local environment surrounding the E center we have generated special quasirandom structures that represent random silicon-germanium alloys. It is predicted that the stability of E centers does not vary linearly with the composition of the silicon-germanium alloy. Interestingly, we predict that the nonlinear behavior does not depend on the donor atom of the E center but only on the host lattice. The impact on diffusion properties is discussed in view of recent experimental and theoretical results.
|Item Type:||Journal Article|
|Copyright Holders:||2008 The American Physical Society|
|Academic Unit/Department:||Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
|Depositing User:||Alexander Chroneos|
|Date Deposited:||07 Nov 2012 12:05|
|Last Modified:||06 Oct 2016 16:41|
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