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Nonlinear stability of E centers in Si1-xGex: electronic structure calculations

Chroneos, A.; Bracht, H.; Jiang, C. and Uberuaga, B. P. (2008). Nonlinear stability of E centers in Si1-xGex: electronic structure calculations. Physical Review B, 78(19) p. 195201.

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Electronic structure calculations are used to investigate the binding energies of defect pairs composed of lattice vacancies and phosphorus or arsenic atoms (E centers) in silicon-germanium alloys. To describe the local environment surrounding the E center we have generated special quasirandom structures that represent random silicon-germanium alloys. It is predicted that the stability of E centers does not vary linearly with the composition of the silicon-germanium alloy. Interestingly, we predict that the nonlinear behavior does not depend on the donor atom of the E center but only on the host lattice. The impact on diffusion properties is discussed in view of recent experimental and theoretical results.

Item Type: Journal Item
Copyright Holders: 2008 The American Physical Society
ISSN: 1550-235X
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID: 35176
Depositing User: Alexander Chroneos
Date Deposited: 07 Nov 2012 12:05
Last Modified: 07 Dec 2018 17:07
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