Bracht, Hartmut and Chroneos, Alexander
The vacancy in silicon: a critical evaluation of experimental and theoretical results.
Journal of Applied Physics, 104(7)076108.
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Recent experimental studies of Shimizu [Phys. Rev. Lett. 98, 095901 (2007)] revealed an activation enthalpy of 3.6 eV for the vacancy contribution to Si self-diffusion. Although this value seems to be in accurate agreement with recent theoretical results, it is at variance with experiments on vacancy-mediated dopant diffusion in Si. In the present study we review results from electronic structure calculations and conclude that the calculations are consistent with an activation enthalpy of 4.5-4.6 eV rather than 3.6 eV for the vacancy contribution to self-diffusion. Moreover, our calculations predict activation enthalpies of 4.45 and 3.81 eV for the vacancy-mediated diffusion of phosphorus and antimony, respectively, in good agreement with the most recent experimental results. (C) 2008 American Institute of Physics
||2008 American Institute of Physics
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||Mathematics, Computing and Technology > Engineering & Innovation
||06 Nov 2012 09:50
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