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Vacancy-mediated dopant diffusion activation enthalpies for germanium

Chroneos, A.; Bracht, H.; Grimes, R. W. and Uberuaga, B. P. (2008). Vacancy-mediated dopant diffusion activation enthalpies for germanium. Applied Physics Letters, 92(17) p. 172103.

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Electronic structure calculations are used to predict the activation enthalpies of diffusion for a range of impurity atoms (aluminium, gallium, indium, silicon, tin, phosphorus, arsenic, and antimony) in germanium. Consistent with experimental studies, all the impurity atoms considered diffuse via their interaction with vacancies. Overall, the calculated diffusion activation enthalpies are in good agreement with the experimental results, with the exception of indium, where the most recent experimental study suggests a significantly higher activation enthalpy. Here, we predict that indium diffuses with an activation enthalpy of 2.79 eV, essentially the same as the value determined by early radiotracer studies.

Item Type: Journal Item
Copyright Holders: 2008 American Institute of Physics
ISSN: 1077-3118
Extra Information: 3 pp.
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID: 35162
Depositing User: Alexander Chroneos
Date Deposited: 31 Oct 2012 15:54
Last Modified: 08 Dec 2018 17:03
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