The Open UniversitySkip to content
 

Vacancy-mediated dopant diffusion activation enthalpies for germanium

Chroneos, A.; Bracht, H.; Grimes, R. W. and Uberuaga, B. P. (2008). Vacancy-mediated dopant diffusion activation enthalpies for germanium. Applied Physics Letters, 92(17) p. 172103.

Full text available as:
[img]
Preview
PDF (Version of Record) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (158Kb) | Preview
URL: http://apl.aip.org/resource/1/applab/v92/i17/p1721...
DOI (Digital Object Identifier) Link: http://dx.doi.org/10.1063/1.2918842
Google Scholar: Look up in Google Scholar

Abstract

Electronic structure calculations are used to predict the activation enthalpies of diffusion for a range of impurity atoms (aluminium, gallium, indium, silicon, tin, phosphorus, arsenic, and antimony) in germanium. Consistent with experimental studies, all the impurity atoms considered diffuse via their interaction with vacancies. Overall, the calculated diffusion activation enthalpies are in good agreement with the experimental results, with the exception of indium, where the most recent experimental study suggests a significantly higher activation enthalpy. Here, we predict that indium diffuses with an activation enthalpy of 2.79 eV, essentially the same as the value determined by early radiotracer studies.

Item Type: Journal Article
Copyright Holders: 2008 American Institute of Physics
ISSN: 1077-3118
Extra Information: 3 pp.
Academic Unit/Department: Mathematics, Computing and Technology > Engineering & Innovation
Item ID: 35162
Depositing User: Alexander Chroneos
Date Deposited: 31 Oct 2012 15:54
Last Modified: 31 Oct 2012 18:02
URI: http://oro.open.ac.uk/id/eprint/35162
Share this page:

Actions (login may be required)

View Item
Report issue / request change

Policies | Disclaimer

© The Open University   + 44 (0)870 333 4340   general-enquiries@open.ac.uk