The Open UniversitySkip to content
 

Modelling charge transfer in a radiation damaged charge coupled device for Euclid

Hall, David J.; Holland, Andrew; Murray, Neil; Gow, Jason and Clarke, Andrew (2012). Modelling charge transfer in a radiation damaged charge coupled device for Euclid. In: High Energy, Optical, and Infrared Detectors for Astronomy V, 01-06 July 2012, Amsterdam.

Full text available as:
[img]
Preview
PDF (Accepted Manuscript) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (597Kb) | Preview
URL: http://proceedings.spiedigitallibrary.org/proceedi...
DOI (Digital Object Identifier) Link: http://dx.doi.org/10.1117/12.925394
Google Scholar: Look up in Google Scholar

Abstract

As electrons are transferred through a radiation damaged Charge Coupled Device (CCD), they may encounter traps in the silicon in which they will be captured and subsequently released. This capture and release of electrons can lead to a 'smearing' of the image. The dynamics of the trapping process can be described through the use of Shockley-Read-Hall theory, in which exponential time constants are used to determine the probability of capture and release. If subjected to a hostile radiation environment, such as in space where the dominant charged particle is the proton, these incident protons can cause displacement damage within the CCD and lead to the formation of stable trap sites. As the trap density increases, the trapping and release of signal electrons can have a major impact on the Charge Transfer Efficiency (CTE) to the detriment of device performance. As the science goals for missions become ever more demanding, such as those for the ESA Euclid and Gaia missions, the problem of radiation damage must be overcome. In order to gain a deeper understanding of the trapping process and the impact on device performance, a Monte Carlo simulation has been developed to model the transfer of charge in a radiation damaged CCD. This study investigates the various difficulties encountered when developing such a model: the incorporation of appropriate clocking mechanisms, the use of suitable trap parameters and their degeneracy, and the development of methods to model the charge storage geometry within a pixel through the use of three-dimensional Silvaco simulations.

Item Type: Conference Item
Copyright Holders: 2012 Society of Photo-Optical Instrumentation Engineers
Extra Information: High Energy, Optical, and Infrared Detectors for Astronomy V
Amsterdam, Netherlands
01-06 July 2012
Conference Volume 8453
Keywords: charge-coupled devices; data storage; electrons; modeling; particles; radiation; silicon; simulations
Academic Unit/Department: Science > Physical Sciences
Interdisciplinary Research Centre: Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR)
Item ID: 34921
Depositing User: Jason Gow
Date Deposited: 30 Oct 2012 11:55
Last Modified: 20 Nov 2013 09:20
URI: http://oro.open.ac.uk/id/eprint/34921
Share this page:

Actions (login may be required)

View Item
Report issue / request change

Policies | Disclaimer

© The Open University   + 44 (0)870 333 4340   general-enquiries@open.ac.uk