Evagora, A. M.; Murray, N. J.; Holland, A. D.; Burt, D. and Endicott, J.
|DOI (Digital Object Identifier) Link:||http://doi.org/10.1088/1748-0221/7/01/C01023|
|Google Scholar:||Look up in Google Scholar|
The charge multiplication process used in the Electron Multiplying CCD (EMCCD) is subject to an ageing effect in which the gain achieved at particular avalanche potentials, gradually decreases during operation. To utilise these devices for both space and terrestrial applications where recalibration of the gain is not feasible, a comprehensive understanding of the ageing process is required.
A custom automated test equipment (ATE) has been produced and used to develop the techniques required for investigating the ageing process alongside the veriﬁcation of simulation work on the subject. Simulation work carried out by e2v technologies has suggested hole build-up at the Si/Si02 interface below one of the transfer gates. This build up of holes has now been linked with a reduction in avalanche potential in the device. A novel experimental technique has therefore been developed to determine the actual potentials within the device and thereby determine the validity of this prediction. The initial results tend to support simulation as an increase in the potential beneath one of the phases is observed.
|Item Type:||Journal Article|
|Copyright Holders:||2012 IOP Publishing Ltd and SISSA|
|Extra Information:||Conference paper from 9th Internation Conference on Position Sensitive Detectors (PSD9)|
|Keywords:||solid state detectors; avalanche-induced secondary effects|
|Academic Unit/Department:||Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
|Interdisciplinary Research Centre:||Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR)|
|Depositing User:||Jason Gow|
|Date Deposited:||24 Oct 2012 13:22|
|Last Modified:||04 Oct 2016 11:20|
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