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Gap modification of atomically thin boron nitride by phonon mediated interactions

Hague, James P. (2012). Gap modification of atomically thin boron nitride by phonon mediated interactions. Nanoscale Research Letters, 7(1) article 303.

URL: http://www.nanoscalereslett.com/content/7/1/303
DOI (Digital Object Identifier) Link: http://dx.doi.org/10.1186/1556-276X-7-303
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Abstract

A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling λ = 1, indicating that a proportion of the measured BN bandgap may have a phonon origin.

Item Type: Journal Article
Copyright Holders: 2012 Hague ; licensee Springer.
ISSN: 1556-276X
Keywords: boron nitride; electron-phonon interactions; semiconductors; two-dimensional materials; graphene
Academic Unit/Department: Science > Physical Sciences
Interdisciplinary Research Centre: Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR)
Biomedical Research Network (BRN)
Item ID: 33989
Depositing User: James Hague
Date Deposited: 12 Jul 2012 09:00
Last Modified: 07 Mar 2014 13:48
URI: http://oro.open.ac.uk/id/eprint/33989
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