Hague, James P.
|DOI (Digital Object Identifier) Link:||http://doi.org/10.1186/1556-276X-7-303|
|Google Scholar:||Look up in Google Scholar|
A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling λ = 1, indicating that a proportion of the measured BN bandgap may have a phonon origin.
|Item Type:||Journal Article|
|Copyright Holders:||2012 Hague ; licensee Springer.|
|Keywords:||boron nitride; electron-phonon interactions; semiconductors; two-dimensional materials; graphene|
|Academic Unit/Department:||Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
|Interdisciplinary Research Centre:||Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR)
Biomedical Research Network (BRN)
|Depositing User:||James Hague|
|Date Deposited:||12 Jul 2012 09:00|
|Last Modified:||04 Oct 2016 11:18|
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