Gap modification of atomically thin boron nitride by phonon mediated interactions

Hague, James P. (2012). Gap modification of atomically thin boron nitride by phonon mediated interactions. Nanoscale Research Letters, 7(1), article no. 303.

DOI: https://doi.org/10.1186/1556-276X-7-303

URL: http://www.nanoscalereslett.com/content/7/1/303

Abstract

A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling λ = 1, indicating that a proportion of the measured BN bandgap may have a phonon origin.

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About

• Item ORO ID
• 33989
• Item Type
• Journal Item
• ISSN
• 1556-276X
• Keywords
• boron nitride; electron-phonon interactions; semiconductors; two-dimensional materials; graphene
• Academic Unit or School
• Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
  Faculty of Science, Technology, Engineering and Mathematics (STEM)
• Research Group
• Physics
• Copyright Holders
• © 2012 Hague ; licensee Springer.
• Depositing User
• James Hague