Hague, James P.
Gap modification of atomically thin boron nitride by phonon mediated interactions.
Nanoscale Research Letters, 7(1)
(Click here to request a copy from the OU Author.
A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling λ = 1, indicating that a proportion of the measured BN bandgap may have a phonon origin.
Actions (login may be required)