Gow, Jason P. D.; Murray, Neil J.; Holland, Andrew D.; Burt, David and Pool, Peter J.
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|DOI (Digital Object Identifier) Link:||https://doi.org/10.1016/j.nima.2012.05.059|
|Google Scholar:||Look up in Google Scholar|
Charge transfer inefficiency and dark current effects are compared for e2v technologies plc. p-channel and n-channel CCDs, both irradiated with protons. The p-channel devices, prior to their irradiation, exhibited twice the dark current and considerable worse charge transfer inefficiency (CTI) than a typical n-channel. The radiation induced increase in dark current was found to be comparable with n-channel CCDs, and its temperature dependence suggest the divacancy is the dominant source of thermally generated dark current pre and post irradiation. The factor of improvement in tolerance to radiation induced CTI varied by between 15 and 25 for serial CTI and 8 and 3 for parallel CTI, between −70 °C and −110 °C respectively.
|Item Type:||Journal Article|
|Copyright Holders:||2012 Elsevier B.V.|
|Keywords:||image sensors; CCD; proton radiation effects; P-channel; CTI; CTE|
|Academic Unit/School:||Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
|Interdisciplinary Research Centre:||Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR)|
|Depositing User:||Jason Gow|
|Date Deposited:||30 May 2012 13:49|
|Last Modified:||30 Nov 2016 14:08|
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