Reflection mechanism for generating spin transfer torque without charge current

Autes, G.; Mathon, J. and Umerski, A. (2012). Reflection mechanism for generating spin transfer torque without charge current. Journal of Applied Physics, 111(5), article no. 053909.

DOI: https://doi.org/10.1063/1.3689745

Abstract

A reflection mechanism for generating spin-transfer torque is proposed. It is due to interference of bias-driven nonequilibrium electrons incident on a switching junction, with the electrons reflected from an insulating barrier inserted in the junction after the switching magnet. It is shown, using the rigorous Keldysh formalism, that this out-of-plane torque T_⊥ is proportional to an applied bias and is as large as the torque in a conventional junction generated by a strong charge current. However, the charge current and the in-plane torque T_∥ are almost completely suppressed by the insulating barrier. This junction thus offers the highly applicable possibility of bias-induced switching of magnetization without charge current.

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• Item ORO ID
• 33152
• Item Type
• Journal Item
• ISSN
• 1089-7550
• Extra Information
• This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
• Academic Unit or School
• Faculty of Science, Technology, Engineering and Mathematics (STEM) > Mathematics and Statistics
  Faculty of Science, Technology, Engineering and Mathematics (STEM)
• Copyright Holders
• © 2012 American Institute of Physics
• Depositing User
• Andrey Umerski