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Universal anomalous exponent of photoconduction

Wilkinson, M. (2011). Universal anomalous exponent of photoconduction. Europhysics Letters, 96(6), article no. 67007.

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Experiments often show that the photoconductance σ of a semiconductor system and the light intensity I are related by σ~Iγ. Conventional theories give a satisfactory explanation for γ=1 or γ=1/2, but anamalous exponents close to γ=3/4 are often observed. This paper argues that there is a universal anomalous regime for which γ=3/4 (or γ=2/3 in two dimensions), resulting from the kinetics of electron-hole recombination being controlled by Coulombic attraction. Because the local electric fields are extremely high, the theory uses the "hot-carrier" model for transport.

Item Type: Journal Article
Copyright Holders: 2011 EPLA
ISSN: 1286-4854
Keywords: Condensed matter; electrical, magnetic and optical; semiconductors; photoconduction and photovoltaic effects
Academic Unit/Department: Mathematics, Computing and Technology > Mathematics and Statistics
Item ID: 30916
Depositing User: Michael Wilkinson
Date Deposited: 06 Jan 2012 15:45
Last Modified: 14 Nov 2013 17:08
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