Yan, L.; Kong, L. B.; Chen, L. F.; Chong, K. B.; Tan, C. Y. and Ong, C. K.
Ba0.5Sr0.5TiO3–Bi1.5Zn1.0Nb1.5O7 composite thin films with promising microwave dielectric properties for microwave device applications.
Applied Physics Letters, 85(16) pp. 3522–3524.
Crack-free, dense, and uniform Ba0.5Sr0.5TiO3(BST)–Bi1.5Zn1.0Nb1.5O7(BZN) composite thin films were deposited on (100) LaAlO3, (100) SrTiO3, and (100) MgO substrates via a pulsed laser deposition, using a combined target of BST and BZN ceramics. Phase composition and microstructure of the BST-BZN thin films were characterized by x-ray diffraction and scanning electron microscopy. The films, on LAO, STO, and MgO substrates, showed zero-field microwave (-7.7 GHz) dielectric constants of 471, 435, and 401, dielectric loss tangents of 0.0048, 0.0043, and 0.0037, and dielectric tunabilities of 6.2%, 6.0%, and 5.7% at -8.1 kV∕cm, respectively. The good physical and electrical properties of the BST–BZN composite thin films make them promising candidates for microwave device applications.
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