Chong, K. B.; Kong, L. B.; Chen, L. F.; Yan, L.; Tan, C. Y.; Yang, T.; Ong, C. K. and Opsipowicz, T.
Improvement of dielectric loss tangent of Al2O3 doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices.
Journal of Applied Physics, 95(3) pp. 1416–1419.
Full text available as:
Al2O3 doped Ba0.5Sr0.5TiO3 (BST) thin films, with different Al2O3 contents, were deposited on (100) LaAlO3 substrates by the pulsed laser deposition technique to develop agile thin films for tunable microwave device applications. The dielectric properties of Al2O3 doped BST films were determined with a nondestructive dual resonator near 7.7 GHz. We demonstrated that the Al2O3 doping plays a significant role in improving the dielectric properties of BST thin films. The Al2O3 doping successfully reduced the dielectric loss tangent (tan δ) from 0.03 (pure BST) to 0.011 (Al2O3 doped BST). Reduction in the loss tangent also leads to reduction in the dielectric constant and dielectric tunability. Our results showed that the BSTA4 film remains tunability=15.9%, which is sufficient for tunable microwave devices applications. Consequently, the Al2O3 doping improved the figure of merit (K) for the BST films from K=7.33 (pure BST) to K=14.45 (Al2O3 doped BST).
||2004 American Institute of Physics
||This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
||Faculty of Science, Technology, Engineering and Mathematics (STEM)
K B Chong
||16 Sep 2010 10:47
||08 Oct 2016 08:09
|Share this page:
Download history for this item
These details should be considered as only a guide to the number of downloads performed manually. Algorithmic methods have been applied in an attempt to remove automated downloads from the displayed statistics but no guarantee can be made as to the accuracy of the figures.
Actions (login may be required)