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Asymptotic behavior of tunneling magnetoresistance in epitaxial MgO tunnel junctions

Autès, G.; Mathon, J. and Umerski, A. (2010). Asymptotic behavior of tunneling magnetoresistance in epitaxial MgO tunnel junctions. Physical Review B, 82(5) 052405.

DOI (Digital Object Identifier) Link: http://dx.doi.org/10.1103/PhysRevB.82.052405
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Abstract

Almost a decade after the theoretical prediction of large tunneling magnetoresistance ratio (TMR) in epitaxial Fe/MgO/Fe tunneling junctions, there is still debate on how the TMR should behave as a function of MgO thickness for thick MgO. In this Brief Report we prove that the optimistic TMR grows indefinitely with MgO thickness, and in particular, that for large MgO thicknesses it must grow linearly. This rather surprising result is obtained using straightforward and completely general asymptotic analysis and is applicable to other tunneling junctions with MgO barrier. We give a simple formula for the growth of TMR and show that it is in excellent agreement with computational studies on realistic epitaxial systems. The formula also provides a valuable test to check that numerical studies are converging to the correct answer.

Item Type: Journal Article
Copyright Holders: 2010 The American Physical Society
ISSN: 1098-0121
Project Funding Details:
Funded Project NameProject IDFunding Body
Not SetNot SetEPSRC (Engineering and Physical Sciences Research Council)
Academic Unit/Department: Mathematics, Computing and Technology > Mathematics and Statistics
Item ID: 22940
Depositing User: Andrey Umerski
Date Deposited: 07 Sep 2010 15:18
Last Modified: 24 Mar 2014 13:41
URI: http://oro.open.ac.uk/id/eprint/22940
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