The Open UniversitySkip to content

Theory of tunneling magnetoresistance in a disordered Fe/MgO/Fe(001) junction

Mathon, J. and Umerski, A. (2006). Theory of tunneling magnetoresistance in a disordered Fe/MgO/Fe(001) junction. Physical Review B, 74(14) p. 140404.

Full text available as:
PDF (Version of Record) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (258Kb)
Google Scholar: Look up in Google Scholar


Calculation of the tunneling magnetoresistance (TMR) of an Fe/MgO/Fe(001) junction with a disordered Fe/MgO interface is reported. It is shown that intermixing of Fe and Mg atoms at the interface decreases the TMR ratio rapidly and when about 16% of interfacial Fe atoms are substituted by Mg the calculated TMR saturates with increasing MgO thickness in good agreement with experiment. It is demonstrated that the saturation of TMR occurs because interfacial scattering leads to a redistribution of conductance channels, which opens up the perpendicular tunneling channel in the antiferromagnetic configuration that is forbidden for a perfect epitaxial junction.

Item Type: Journal Article
Copyright Holders: 2006 The American Physical Society
ISSN: 1098-0121
Academic Unit/Department: Mathematics, Computing and Technology > Mathematics and Statistics
Mathematics, Computing and Technology
Item ID: 22487
Depositing User: Andrey Umerski
Date Deposited: 30 Jul 2010 15:12
Last Modified: 23 Feb 2016 18:13
Share this page:

Download history for this item

These details should be considered as only a guide to the number of downloads performed manually. Algorithmic methods have been applied in an attempt to remove automated downloads from the displayed statistics but no guarantee can be made as to the accuracy of the figures.

▼ Automated document suggestions from open access sources

Actions (login may be required)

Policies | Disclaimer

© The Open University   + 44 (0)870 333 4340