Autès, G.; Mathon, J. and Umerski, A.
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|DOI (Digital Object Identifier) Link:||http://doi.org/10.1103/PhysRevLett.104.217202|
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Calculations of the tunneling magnetoresistance (TMR) of an epitaxial Fe/MgO/Fe tunneling junction attached to an n-type GaAs lead, under positive gate voltage, are presented. It is shown that for realistic GaAs carrier densities the TMR of this composite system can be more than 2 orders of magnitude higher than that of a conventional Fe/MgO/Fe junction. Furthermore, the high TMR is achieved with modest MgO thicknesses and is very robust to disorder at the Fe/GaAs interface and within the GaAs layer itself. The significant practical advantage of this system is that huge TMRs should be attainable for junctions with modest resistances. For a GaAs carrier density of 1019??cm-3 the system is calculated to have a TMR in excess of 10?000% but its resistance is equivalent to that of a conventional Fe/MgO/Fe junction with only 6–7 at. planes of MgO.
|Item Type:||Journal Article|
|Copyright Holders:||2010 The American Physical Society|
|Academic Unit/Department:||Faculty of Science, Technology, Engineering and Mathematics (STEM) > Mathematics and Statistics
Faculty of Science, Technology, Engineering and Mathematics (STEM)
|Depositing User:||Andrey Umerski|
|Date Deposited:||28 Jul 2010 12:54|
|Last Modified:||04 Aug 2016 13:43|
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