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Strong enhancement of the tunneling magnetoresistance by electron filtering in an Fe/MgO/Fe/GaAs(001) junction

Autès, G.; Mathon, J. and Umerski, A. (2010). Strong enhancement of the tunneling magnetoresistance by electron filtering in an Fe/MgO/Fe/GaAs(001) junction. Physical Review Letters, 104(21) p. 217202.

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Calculations of the tunneling magnetoresistance (TMR) of an epitaxial Fe/MgO/Fe tunneling junction attached to an n-type GaAs lead, under positive gate voltage, are presented. It is shown that for realistic GaAs carrier densities the TMR of this composite system can be more than 2 orders of magnitude higher than that of a conventional Fe/MgO/Fe junction. Furthermore, the high TMR is achieved with modest MgO thicknesses and is very robust to disorder at the Fe/GaAs interface and within the GaAs layer itself. The significant practical advantage of this system is that huge TMRs should be attainable for junctions with modest resistances. For a GaAs carrier density of 1019??cm-3 the system is calculated to have a TMR in excess of 10?000% but its resistance is equivalent to that of a conventional Fe/MgO/Fe junction with only 6–7 at. planes of MgO.

Item Type: Journal Article
Copyright Holders: 2010 The American Physical Society
ISSN: 1079-7114
Academic Unit/Department: Mathematics, Computing and Technology > Mathematics and Statistics
Mathematics, Computing and Technology
Item ID: 22418
Depositing User: Andrey Umerski
Date Deposited: 28 Jul 2010 12:54
Last Modified: 23 Feb 2016 18:29
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