Gow, J.; Murray, N. J.; Holland, A. D.; Burt, D. and Pool, P.
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|DOI (Digital Object Identifier) Link:||https://doi.org/10.1117/12.826866|
|Google Scholar:||Look up in Google Scholar|
It has been demonstrated that p-channel charge coupled devices (CCDs) are more radiation hard than conventional n-channel devices as they are not affected by the dominant electron trapping caused by the displacement damage defect the E-centre (phosphorus-vacancy). This paper presents a summary of the results from a comparative study of n-channel and p-channel CCDs each type operated under the same conditions. The CCD tested is the e2v technologies plc CCD47-20, a 1024 ? 1024 frame transfer device with a split output register, fabricated using the same mask to form n-channel and
p-channel devices. The p-channel devices were irradiated to a 10 MeV equivalent proton fluence of 4.07?1010 protons.cm-2 and 1.35?1011 protons.cm-2, an n-channel CCD was irradiated to a 10 MeV equivalent proton fluence of 1.68?109 protons.cm-2, however due to time constraints the n-channel device was not characterised, n-channel comparisons are instead made using a CCD02. As expected the p-channel CCD demonstrated improved radiation tolerance when compared to the n-channel CCD, at -90 ?C there is an approximate ×7 and ×15 improvement in tolerance to radiation induced parallel and serial CTI respectively for equivalent pixel geometries.
|Item Type:||Conference Item|
|Copyright Holders:||SPIE - The International Society for Optical Engineering|
|Keywords:||CCD; proton radiation damage; p-channel; n-channel; charge transfer efficiency; displacement damage hardened;|
|Academic Unit/Department:||Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
|Interdisciplinary Research Centre:||Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR)|
|Depositing User:||Jason Gow|
|Date Deposited:||03 Feb 2010 14:19|
|Last Modified:||05 Oct 2016 18:00|
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