Kowal, J.; Nixon, T.; Aitken, N. and Braithwaite, N. St. J.
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|DOI (Digital Object Identifier) Link:||http://doi.org/10.1016/j.sna.2009.08.018|
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A new method of exposing silicon/semiconductor wafers to a mixture of radicals is described, in which these species are generated in an oxygen-rich gas discharge confined between a concentric pair of annular mesh electrodes surrounding the wafers. This approach allows the wafer surfaces to be treated without damage from the energetic ions, strong electric fields, and high UV fluxes associated with direct treatment by exposure to gas discharge plasmas. The process is compared with direct oxygen plasma activation for its latitude with respect to treatment duration, effect on wafer surface roughness and bond strength. Wider process latitude and reduced surface roughening are obtained for treatment by radicals compared with direct plasma exposure. Comparative analysis of treated and untreated silicon surfaces by X-ray photoelectron spectroscopy indicate that traces of fluorine present on the wafer surface before treatment are removed with great efficiency by the process.
|Item Type:||Journal Article|
|Copyright Holders:||2009 Elsevier B.V.|
|Project Funding Details:||
|Keywords:||wafer bonding; radical; activation; plasma; XPS; surface science; electron spectroscopy; fluorine; silicon|
|Academic Unit/Department:||Mathematics, Computing and Technology > Engineering & Innovation
Mathematics, Computing and Technology
Science > Physical Sciences
|Interdisciplinary Research Centre:||Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR)|
|Depositing User:||Colin Smith|
|Date Deposited:||08 Sep 2009 14:47|
|Last Modified:||23 Feb 2016 21:42|
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