Murray, N. J.; Holland, A. D.; Smith, D. R.; Gow, J. P.; Pool, P. J. and Burt, D. J.
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|DOI (Digital Object Identifier) Link:||http://doi.org/10.1016/j.nima.2009.01.052|
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The CCD247 is the second generation of high-resistivity device to be manufactured in e2v technologies plc development programme. Intended for infrared astronomy, the latest devices are fabricated on high resistivity (~8 kΩ cm) bulk silicon, allowing for a greater device thickness whilst maintaining full depletion when 'thinned' to a thickness of 150 μm. In the case of the front illuminated variant, depletion of up to 300 μm is achievable by applying a gate to substrate potential of up to 120 V, whilst retaining adequate spectral performance. The increased depletion depth of high-resistivity CCDs greatly improves the quantum efficiency (QE) for incident X-ray photons of energies above 5 keV, making such a device beneficial in future X-ray astronomy missions and other applications. Here we describe the experimental setup and present results of X-ray QE measurements taken in the energy range 2-20 keV for a front illuminated CCD247, showing QE in excess of 80% at 10 keV. Results for the first generation CCD217 and swept-charge device (1500 Ω cm epitaxial silicon) are also presented.
|Item Type:||Journal Article|
|Copyright Holders:||2009 ElsevierB.V.|
|Keywords:||X-ray; CCD; SCD; quantum efficiency; QE; full depletion; deep depletion; high resistivity; high-rho; SiLi|
|Academic Unit/Department:||Science > Physical Sciences
|Interdisciplinary Research Centre:||Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR)|
|Depositing User:||Neil Murray|
|Date Deposited:||10 Jun 2009 14:50|
|Last Modified:||23 Feb 2016 22:21|
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