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The X-ray quantum efficiency measurement of high resistivity CCDs

Murray, N. J.; Holland, A. D.; Smith, D. R.; Gow, J. P.; Pool, P. J. and Burt, D. J. (2009). The X-ray quantum efficiency measurement of high resistivity CCDs. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 604(1-2) pp. 180–182.

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The CCD247 is the second generation of high-resistivity device to be manufactured in e2v technologies plc development programme. Intended for infrared astronomy, the latest devices are fabricated on high resistivity (~8 kΩ cm) bulk silicon, allowing for a greater device thickness whilst maintaining full depletion when 'thinned' to a thickness of 150 μm. In the case of the front illuminated variant, depletion of up to 300 μm is achievable by applying a gate to substrate potential of up to 120 V, whilst retaining adequate spectral performance. The increased depletion depth of high-resistivity CCDs greatly improves the quantum efficiency (QE) for incident X-ray photons of energies above 5 keV, making such a device beneficial in future X-ray astronomy missions and other applications. Here we describe the experimental setup and present results of X-ray QE measurements taken in the energy range 2-20 keV for a front illuminated CCD247, showing QE in excess of 80% at 10 keV. Results for the first generation CCD217 and swept-charge device (1500 Ω cm epitaxial silicon) are also presented.

Item Type: Journal Item
Copyright Holders: 2009 ElsevierB.V.
ISSN: 0168-9002
Keywords: X-ray; CCD; SCD; quantum efficiency; QE; full depletion; deep depletion; high resistivity; high-rho; SiLi
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Research Group: Centre for Electronic Imaging (CEI)
Item ID: 14950
Depositing User: Neil Murray
Date Deposited: 10 Jun 2009 14:50
Last Modified: 10 Dec 2018 12:43
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