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High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition

von Kanel, H.; Chrastina, D.; Roessner, B.; Isella, G.; Hague, J.P. and Bollani, M. (2004). High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition. Microelectronic Engineering, 76(1-4) pp. 279–284.

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We present results obtained on modulation-doped quantum wells with compressively strained Ge channels. The heterostructures have been grown by low-energy plasma-enhanced chemical vapor deposition (LEPECVD). Magnetotransport measurements were carried out both on van der Pauw squares and lithographically defined Hall bars. The 2 K hole mobility increases with sheet density, and exceeds 105 cm2 V−1 s−1 below 40 K for carrier densities above 8 × 1011 cm−2. It is dominated by remote impurity scattering, according to linear transport theory calculations. The same conclusion follows from the Dingle ratios of 5–10 derived from the low-field longitudinal magnetoresistance. Room-temperature channel mobilities were extracted from the magnetic field dependence of longitudinal and transverse magnetoresistance by means of mobility spectrum analysis. We obtained 2940 cm2 V−1 s−1 at a sheet hole density of 5.7 × 1011 cm−2.

Item Type: Journal Article
Copyright Holders: 2004 Elsevier B.V.
ISSN: 0167-9317
Project Funding Details:
Funded Project NameProject IDFunding Body
Not SetNot SetGROWTH Program ECOPRO No. GRD2-2000-30064
Extra Information: Materials for Advanced Metallization 2004
Brussels, Belgium
Edited by Gerald Beyer, Karen Maex, Muriel de Potter
Keywords: Silicon–germanium (SiGe); Virtual substrate; Relaxed buffer; MODFET
Academic Unit/Department: Science > Physical Sciences
Interdisciplinary Research Centre: Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR)
Biomedical Research Network (BRN)
Item ID: 12304
Depositing User: James Hague
Date Deposited: 19 Feb 2009 14:26
Last Modified: 14 Jan 2016 17:27
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