von Kanel, H.; Chrastina, D.; Roessner, B.; Isella, G.; Hague, J.P. and Bollani, M.
(2004).
| DOI (Digital Object Identifier) Link: | http://dx.doi.org/doi:10.1016/j.mee.2004.07.029 |
|---|---|
| Google Scholar: | Look up in Google Scholar |
Abstract
We present results obtained on modulation-doped quantum wells with compressively strained Ge channels. The heterostructures have been grown by low-energy plasma-enhanced chemical vapor deposition (LEPECVD). Magnetotransport measurements were carried out both on van der Pauw squares and lithographically defined Hall bars. The 2 K hole mobility increases with sheet density, and exceeds 105 cm2 V−1 s−1 below 40 K for carrier densities above 8 × 1011 cm−2. It is dominated by remote impurity scattering, according to linear transport theory calculations. The same conclusion follows from the Dingle ratios of 5–10 derived from the low-field longitudinal magnetoresistance. Room-temperature channel mobilities were extracted from the magnetic field dependence of longitudinal and transverse magnetoresistance by means of mobility spectrum analysis. We obtained 2940 cm2 V−1 s−1 at a sheet hole density of 5.7 × 1011 cm−2.
| Item Type: | Journal Article |
|---|---|
| Copyright Holders: | 2004 Elsevier B.V. |
| ISSN: | 0167-9317 |
| Funders: | GROWTH Program ECOPRO No. GRD2-2000-30064 |
| Extra Information: | Materials for Advanced Metallization 2004
Brussels, Belgium Edited by Gerald Beyer, Karen Maex, Muriel de Potter |
| Keywords: | Silicon–germanium (SiGe); Virtual substrate; Relaxed buffer; MODFET |
| Academic Unit/Department: | Science > Physical Sciences |
| Interdisciplinary Research Centre: | Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR) |
| Item ID: | 12304 |
| Depositing User: | James Hague |
| Date Deposited: | 19 Feb 2009 14:26 |
| Last Modified: | 02 Aug 2011 15:26 |
| URI: | http://oro.open.ac.uk/id/eprint/12304 |
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