Hague, J. P.
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|DOI (Digital Object Identifier) Link:||http://doi.org/10.1088/0953-8984/17/8/017|
|Google Scholar:||Look up in Google Scholar|
I investigate band and Mott insulating states in a two-band Hubbard model, with the aim of understanding the differences between the idealized one-orbital model and the more realistic multi-band case. Using a projection ansatz I show that additional orbitals suppress the metal–insulator transition, leading to a critical coupling of approximately eight times the bare bandwidth. I also demonstrate the effects of orbital ordering, which hinder Mott–Hubbard states and open a bandgap. Since multi-band correlations are common in real materials, this work suggests that very strongly correlated band insulators may be more common than Mott–Hubbard insulators.
|Item Type:||Journal Article|
|Academic Unit/Department:||Faculty of Science, Technology, Engineering and Mathematics (STEM) > Physical Sciences
Faculty of Science, Technology, Engineering and Mathematics (STEM)
|Interdisciplinary Research Centre:||Centre for Earth, Planetary, Space and Astronomical Research (CEPSAR)
Biomedical Research Network (BRN)
|Depositing User:||James Hague|
|Date Deposited:||15 May 2009 13:40|
|Last Modified:||05 Oct 2016 09:57|
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