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Effect of frequency on ambient temperature fatigue crack growth in a silicon carbide reinforced silicon nitride composite

Moffatt, J. E. and Edwards, L. (2008). Effect of frequency on ambient temperature fatigue crack growth in a silicon carbide reinforced silicon nitride composite. International Journal of Fatigue, 30(7) pp. 1289–1297.

DOI (Digital Object Identifier) Link: https://doi.org/10.1016/j.ijfatigue.2007.08.019
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Abstract

A detailed study on a silicon nitride reinforced with silicon carbide whiskers has been undertaken on room temperature fatigue during static and dynamic loading at constant AK. It is shown that sub-critical crack growth rates are lower when the material experiences sustained far field loading than during cyclic far field loading. The increased crack growth rate during cyclic loading is attributed to a wedging effect within the crack wake causing an increase in the tensile stress and resultant increased micro-cracking ahead of the crack tip. This additional micro-structural damage leads to enhanced sub-critical crack growth rates during cyclic loading. The asperities that are responsible for the wedging effect are attributed to the isolation of small portions of material due to branching of small cracks and by degradation of the bridging SiC whiskers and Si3N4 grains within the crack wake.

Item Type: Journal Item
ISSN: 0142-1123
Keywords: Silicon carbide reinforced silicon nitride; Composite; Fatigue crack growth
Academic Unit/School: Faculty of Science, Technology, Engineering and Mathematics (STEM) > Engineering and Innovation
Faculty of Science, Technology, Engineering and Mathematics (STEM)
Item ID: 11610
Depositing User: Michael E. Fitzpatrick
Date Deposited: 04 Sep 2008 03:33
Last Modified: 14 Sep 2017 15:10
URI: http://oro.open.ac.uk/id/eprint/11610
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